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翻訳と辞書　辞書検索 [ 開発暫定版 ] スポンサード リンク Silicon bandgap temperature sensor ： ウィキペディア英語版 Silicon bandgap temperature sensor The silicon bandgap temperature sensor is an extremely common form of temperature sensor (thermometer) used in electronic equipment. Its main advantage is that it can be included in a silicon integrated circuit at very low cost. The principle of the sensor is that the forward voltage of a silicon diode, which may be the base-emitter junction of a bipolar junction transistor (BJT), is temperature-dependent, according to the following equation: :$V\_=V\_\backslash left(1-\}\backslash right)+V\_\backslash left(\backslash frac\backslash right)+$ \left(\frac\right)\ln\left(\frac\right)+ \left(\frac\right)\ln\left(\frac=\frac\cdot\ln\left(\frac}\right) \, Note that the junction voltage is a function of current density, i.e. current/junction area, and a similar output voltage can be obtained by operating the two junctions at the same current, if one is of a different area to the other. A circuit that forces ''I''C1 and ''I''C2 to have a fixed N:1 ratio,〔 James Bryant. ("IC Temperature Sensors" ). Analog Devices. 2008. 〕 gives the relationship: :$\backslash Delta\; V\_=\backslash frac\backslash cdot\backslash ln\backslash left(N\backslash right)\; \backslash ,$ An electronic circuit, such as the Brokaw bandgap reference, that measures Δ''V''''BE'' can therefore be used to calculate the temperature of the diode. The result remains valid up to about 200 °C to 250 °C, when leakage currents become large enough to corrupt the measurement. Above these temperatures, materials such as silicon carbide can be used instead of silicon. The voltage difference between two p-n junctions (e.g. diodes), operated at different current densities, is proportional to absolute temperature (PTAT). PTAT circuits using either BJT or CMOS transistors are widely used in temperature sensors (where we want the output to vary with temperature), and also in bandgap voltage references and other temperature-compensating circuits (where we want the same output at every temperature).〔〔 AL.AL, M. B. I. Reaz, S. M. A. Motakabber Mohd Alauddin Mohd Ali. ("A Single-chip Proportional to Absolute Temperature Sensor Using CMOS Technology" ). 2012. 〕〔 C. Rossi, C. Galup-Montoro, and M. C. Schneider. ("PTAT Voltage Generator based on an MOS Voltage Divider" ). Nanotechnology Conference and Trade Show, Technical Proceedings, 2007. 〕〔 Andre Luiz Aita and Cesar Ramos Rodrigues. ("PTAT CMOS Current Sources Mismatch over Temperature" ). The 26th Symposium on Integrated Circuits and System Design (SBCCI 2013). 2013. 〕 If high precision is not required it is enough to bias a diode with any constant low current and use its −2 mV/˚C thermal coefficient for temperature calculation, however this requires calibration for each diode type. This method is common in monolithic temperature sensors.(required ) ==References== * 抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』 ■ウィキペディアで「Silicon bandgap temperature sensor」の詳細全文を読む スポンサード リンク 翻訳と辞書 : 翻訳のためのインターネットリソース Copyright(C) kotoba.ne.jp 1997-2016. All Rights Reserved.